More Energy Efficient Transistors through Quantum Tunneling

Researchers at the University of Notre Dame and Pennsylvania State University had announced that they had developed Tunneling Field Effect Transistor (TFET), which takes the advantage of a peculiar behaviour of electrons at quantum level. We know that transistors are the basic building block of electronic devices that power this digital world. The growth of computing power over the last 40 years had made possible by increasing the number of transistors that integrated in single silicon chip. Now we have more [...]

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